Advantages of Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

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概要

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• We have investigated the low-frequency noise behavior of silicon nanowire metal--oxide--semiconductor field-effect transistors (NWFETs) by comparison with that of a planar FET. We have found that the NWFET exhibits lower noise intensity than the planar FET. By analyzing the factors influential to noise intensity, one of the most possible origins of this advantage of the NWFET results from the electron distribution in the channel in NWFET. Owing to quantum confinement, the position of charge-centroids in the channel of NWFET is located further from the interface, resulting in the lower trapping probability between the electrons and oxide traps. These results clearly demonstrate the advantage of three-dimensional structures in static and noise properties.

• 2012-04-25

著者

• Yamada Keisaku

  Graduate School Of Pure And Applied Sciences University Of Tsukuba

• Iwai Hiroshi

  Frontier Collaborative Research Center Tokyo Institute Of Technology

• Kakushima Kuniyuki

  Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology

• Ohmori Kenji

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Yamada Keisaku

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Sato Soshi

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Feng Wei

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Hettiarachchi Ranga

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Niwa Masaaki

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Kakushima Kuniyuki

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Iwai Hiroshi

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Niwa Masaaki

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

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