Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• MIYAZAKI Seiichi

  Hiroshima University

• Shiraishi K

  Institute Of Physics University Of Tsukuba

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• INUMIYA Seiji

  Semiconductor Leading Edge Technologies, Inc.

• NARA Yasuo

  Semiconductor Leading Edge Technologies, Inc.

• Inumiya Seiji

  Semiconductor Leading Edge Technologies Inc. (selete)

• Inumiya Seiji

  Semiconductor Company Toshiba Corporation

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc. (selete)

• SATO Motoyuki

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• YAMABE Kikuo

  Univ. of Tsukuba

• SHIRAISHI Kenji

  Univ. of Tsukuba

• YAMADA Keisaku

  Waseda Univ.

• TAMURA Chihiro

  Univ. of Tsukuba

• HASUNUMA Ryu

  Univ. of Tsukuba

• AOYAMA Takayuki

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• OHJI Yuzuru

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• Yamamoto K

  Univ. Of Tsukuba

• Yamamoto K

  Kaneka Corporation

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Ohji Yuzuru

  Semiconductor Leading Edge Technol. Inc. (selete) Ibaraki Jpn

• Ohji Yuzuru

  Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Yamada Keisaku

  Graduate School Of Pure And Applied Sciences University Of Tsukuba

• Yamamoto K

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc.

• Yamada Keisaku

  Nanotechnology Research Laboratories Waseda University

• Yamada Keisaku

  Univ. Of Tsukuba

• Sato Motoyuki

  Semiconductor Leading Edge Technologies Inc. (selete)

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies Inc. (selete)

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies Inc.

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan

関連論文

• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Binding Energies of Amorphous CN and SiCN Films on X-Ray Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
• The Fraction of Sp^3 Bonding in Carbon Thin Film Prepared Using Pulsed Laser Deposition
• Formation of Cubic Phase Carbon Nitride Solid by Low Energy Nitrogen Implantation into Graphite
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
• Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
• Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Ballistic Weak Localization and Wave Function Scarring in Quantum Wires
• High-resolution RBS analysis of Si-dielectrics interfaces
• Is There a Magnetic-Field-Induced Breakdown in the Universality of Conductance Fluctuations?
• Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
• Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
• Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
• Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing (Special Issue: Solid State Devices & Materials)
• Extendibility of High Mobility HfSiON Gate Dielectrics
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
• Hafnium 4f core-level shifts caused by nitrogen incorporation in Hf-based high-k gate dielectrics
• Guiding principle of energy level controllability of silicon dangling bonds in HfSiON (Special issue: Solid state devices and materials)
• Phase Breaking of Coherent Electron Waves in Dot Array Systems ( Quantum Dot Structures)
• Trajectory Transition Due to Gate Depletion in Corrugation Gated Quantum Wires
• Study of Scattering Processes in Quantum Wires by a Correlation Field Analysis of the Phase Coherent Interferences
• Experimental Determination of the Conduction Width in Quasi Ballistic Wires
• Transport Critical Currents of Single-Crystal YBa_2Cu_3O_ Thin Films in Weak Magnetic Fields Applied at Varied Angles to Film Surface
• Structural Study on Nd_Ce_CuO_ Epitaxial Thin Film Grown by Activated Reactive Evaporation Method
• Third-Harmonic Susceptibility in Single-Crystal YBa_2Cu_3O_ Thin Films
• In Situ Reflection High Energy Electron Diffraction Observation During Growth of YBa_2Cu_3O_ Thin Films by Activated Reactive Evaporation
• X-Ray Diffraction Study on Yba_2Cu_3O_ Epitaxial Thin Film Grown by an Activated Reactive Evaporation Method : Electrical Properties of Condensed Matter
• Single-Crystal YBa_2Cu_3O_ Thin Films by Activated Reactive Evaporation : Electrical Properties of Condensed Matter
• Effect of Nitrogen on Diffusion in Silicon Oxynitride
• The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
• Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
• Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
• Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
• The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
• Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
• Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
• Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
• Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
• Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
• Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
• High-Performance Poly(3-hexylthiophene) Field-Effect Transistors Fabricated by a Slide-Coating Method
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
• Transition from Semi-Classical to Quantum Transport in Quasi-Ballistic Wires
• Cross-talk Canceller for Wobbling Signal
• Signal Processing for 15/27 GB Read-Only Disk System
• TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
• Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
• Tunable Exchange Interaction in Quantum Dot Devices
• Ferromagnetism in Semiconductor Dot Array
• Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
• Single-Crystal-like Structure of Poly(9,9-dioctylfluorene) Thin Films Evaluated by Synchrotron-Sourced Grazing-Incidence X-ray Diffraction
• Side-Chain Effects on Friction-Transferred Polymer Orientation
• Highly polarized polymer light-emitting diodes utilizing friction-transferred poly(9,9-dioctylfluorene) thin films
• Effects of Cathode Materials on Organic p-i-n Heterojunction Photovoltaic Cells(Characterization and Abilities of Organic Electronic Devices)(Recent Progress in Organic Molecular Electronics)
• Special Section on High-κ Gate Dielectrics
• Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
• Correlation Field Analysis of the Influence of Device Geometry and Bulk Disorder on Electron Interference in Quantum Wires
• Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
• A Study on a Position Measurement Method for Conduit Pipelines Using Cumulating Attitude
• Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs
• Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
• Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
• Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
• Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-$k$/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors
• Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
• Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
• Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing
• Impact of Gate Metal-Induced Stress on Performance Modulation in Gate-Last Metal–Oxide–Semiconductor Field-Effect Transistors

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