OHJI Yuzuru | Semiconductor Leading Edge Technologies, Inc. (Selete)
スポンサーリンク
概要
関連著者
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OHJI Yuzuru
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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SATO Motoyuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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AOYAMA Takayuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Ohji Yuzuru
Semiconductor Leading Edge Technol. Inc. (selete) Ibaraki Jpn
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc. (selete)
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Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
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Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
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MIYAZAKI Seiichi
Hiroshima University
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Hiratani M
Central Research Laboratory Hitachi Ltd.
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Hiratani M
Central Research Laboratory Hitachi Ltd
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Hiratani Masahiko
Central Research Laboratory Hitachi Ltd.
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Shiraishi K
Institute Of Physics University Of Tsukuba
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Nabatame Toshihide
Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva
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Nabatame T
Aist Tsukuba Jpn
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Nabatame Toshihide
Mirai-aset Advanced Industrial Science And Technology (aist)
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Nabatame Toshihide
Hitachi Research Laboratory Hitachi Ltd.
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Suzuki T
Hitachi Research Laboratory Hitachi Ltd.
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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Suzuki T
Nagaoka Univ. Technol.
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INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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SUZUKI Takaaki
Hitachi Research Laboratory of Hitachi Ltd.
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Eimori Takahisa
Semiconductor Leading Edge Technologies Inc.
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Suzuki Tatsuya
Graduate School Of Engineering Yokohama National University
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YAMABE Kikuo
Univ. of Tsukuba
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SHIRAISHI Kenji
Univ. of Tsukuba
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YAMADA Keisaku
Waseda Univ.
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TAMURA Chihiro
Univ. of Tsukuba
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HASUNUMA Ryu
Univ. of Tsukuba
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Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Yamamoto K
Univ. Of Tsukuba
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ASANO Isamu
ELPIDA MEMORY, Inc.
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Matsui Y
Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn
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Matsui Y
Nims Tsukuba Jpn
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MATSUI Yuichi
Central Research Laboratory, Hitachi, Ltd.
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MATSUI Yoshio
Environmental Pollution Research Institute of Nagoya City
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Yamamoto K
Kaneka Corporation
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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SHIMAMOTO Yasuhiro
Central Research Laboratory, Hitachi, Ltd.
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KADOSHIMA Masaru
Hitachi Research Laboratory, Hitachi Ltd.
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ASANO Isamu
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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FUJIWARA Tetsuo
Hitachi Research Laboratory, Hitachi Ltd.
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Matsui Y
Central Research Laboratory Hitachi Ltd.
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Muto Y
The Institute For Materials Research Tohoku University
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Kadoshima Masaru
Hitachi Research Laboratory Hitachi Ltd.
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Fujiwara Tetsuo
Hitachi Research Laboratory Hitachi Ltd.
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Shimamoto Yasuhiro
Central Research Laboratory Hitachi Ltd.
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Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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ONIZAWA Takashi
Semiconductor Leading Edge Technologies, Inc.
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Asano I
Elpida Memory Inc. Kanagawa Jpn
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Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
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Yamada Keisaku
Univ. Of Tsukuba
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Shimamoto Y
Hitachi Ltd. Tokyo Jpn
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MATUSI Yasuji
Product Development Laboratory, Mitsubishi Electric Corporation
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Onizawa Takashi
Semiconductor Leading Edge Technologies Inc.
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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Nabatane Toshihide
Hitachi Research Laboratory, Hitachi Ltd.
著作論文
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
- Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs