Hiratani Masahiko | Central Research Laboratory Hitachi Ltd.

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概要

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著作論文

Tetragonal High-T_c Superconductor in the System Ba_2Y(CuGa_x)_3O_
Low-Temperature Annealing Effect on Bi-Sr-Ca-Cu-O Thin Films Prepared by Layer-by-Layer Deposition
Interfacial Reaction of SrRuO_3 Prepared Directly on TiN
Fabrication of Pd(Zr, Ti)O_3 Microscopic Capacitors by Electron Beam Lithography
SrRuO_3 Thin Films Grown under Reduced Oxygen Pressure
Orientation and Crystal Structure of SrTiO_3 Thin Films Prepared by Pulsed Laser Deposition
Electrical Characteristics of HoBa_2Cu_3O_-La_Ba_Cu_3O_-HoBa_2Cu_3O_ Junctions with Planar-Type Structures
Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere
Thermal Stability of a RuO_2 Electrode Prepared by DC Reactive Sputtering
Hydrogen Reduction Properties of RuO_2 Electrodes
A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
Effective Electron Mobility Reduced by Remote Charge Scattering in High-K Gate Stacks : Short Note
Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors
Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)_3 Dissolved with Tetrahydrofuran Solvent : Surfaces, Interfaoes, and Films
The Atomistic Origin of High Dielectric Constants of Ta_2O_5 Thin Film Deposited on Ru Electrodes
Superconducting Thin Film of (Nd, Ce)_2CuO_
Annealing of (Nd, Ca)_2CuO_4 Compounds under High Oxygen Pressure
Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors
Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors
Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics

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