Fujisaki Yoshihisa | Central Research Laboratory Hitachi Limited
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概要
関連著者
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Fujisaki Yoshihisa
Central Research Laboratory Hitachi Limited
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FUJISAKI Yoshihisa
Central Research Laboratory, Hitachi Ltd.
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Fujisaki Y
R&d Association For Future Electron Devices
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Fujisaki Yoshihisa
R&D Association for Future Electron Devices
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MATSUI Yuichi
Central Research Laboratory, Hitachi, Ltd.
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Miura H
Hitachi Ltd. Tsuchiura‐shi Jpn
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Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Muto Y
The Institute For Materials Research Tohoku University
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Miki Hiroshi
Central Research Laboratory Hitachi Ltd.
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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MIKI Hiroshi
Department of Pathology, Kagawa Medical University
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Kushida‐abdelghafar K
The Authors Are With Central Research Laboratory Hitachi Ltd.
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Hiratani M
Central Research Laboratory Hitachi Ltd.
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Hiratani M
Central Research Laboratory Hitachi Ltd
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Hiratani Masahiko
Central Research Laboratory Hitachi Ltd.
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TORII Kazuyoshi
Central Research Laboratory, Hitachi, Ltd.
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Torii K
Central Research Laboratory Hitachi Ltd.
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Torii Kazuyoshi
Central Research Laboratory Hitachi Lid.
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Torii K
Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn
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Kushida-abdelghafar Keiko
Central Research Laboratory Hitachi Limited
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Takano Y
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Fukuoka University
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Takano Yukio
Department Of Physiology And Pharmacology Faculty Of Pharmaceutical Sciences Fukuoka University
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Takano Yukio
Central Research Laboratory Hitachi Ltd.
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Takano Yukio
Central Research Laboratory
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ISHIBA Tsutomu
Central Research Laboratory, Hitachi Ltd.
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Matsui Y
Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn
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Matsui Y
Nims Tsukuba Jpn
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SHIMAMOTO Yasuhiro
Central Research Laboratory, Hitachi, Ltd.
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Matsui Y
Central Research Laboratory Hitachi Ltd.
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Ishiba T
Central Research Laboratory Hitachi Ltd.
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Ishiba Tsutomu
Central Research Laboratory Hitachi Ltd.
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KUSHIDA Keiko
Central Research Lab., Hitachi, Lid.
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Shimamoto Yasuhiro
Central Research Laboratory Hitachi Ltd.
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Shimamoto Y
Hitachi Ltd. Tokyo Jpn
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Takaura Norikatsu
Central Research Laboratory Hitachi. Ltd.
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Kurotsuchi Kenzo
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Kuroiwa Takeharu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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MIURA Hideo
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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Sakaguchi Harunori
Cable Research Laboratory, Hitachi Cable, Ltd.
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Ono Yuuichi
Central Research Laboratory, Hitachi, Ltd.
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FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Suga Mitsuo
Central Research Laboratory Hitachi Ltd.
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Ono Yuuichi
Central Research Laboratory Hitachi Ltd.
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Yano Fumiko
Central Research Laboratory Hitachi Limited
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Terao Motoyasu
Central Resarch Laboratory Hitachi Ltd.
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Kushida K
Hitachi Ltd. Tokyo Jpn
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CHEN Po-ching
central Research Laboratory, Hitachi, Ltd.
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Chen Po-ching
Central Research Laboratory Hitachi Ltd.
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Fujisaki Sumiko
Hitachi Ltd. Tokyo Jpn
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Fujisaki Sumiko
Hitachi Ltd.
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Sakaguchi Harunori
Cable Research Laboratory Hitachi Cable Ltd.
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Takemura Riichiro
Central Research Laboratory Hitachi Ltd.
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Fujisaki Sumiko
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokoham
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Fujisaki Yoshihisa
Central Research Laboratory Hitachi Ltd.
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KUMAGAI Yukihiro
Mechanical Engineering Research Laboratory, Hitachi, Lid.
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Kumagai Yukihiro
Mechanical Engineering Research Laboratory Hitachi Lid.
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Lee Gwang-geun
Precision And Intelligence Lab Tokyo Institute Of Technology
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Miura Hideo
Mechanical Engineering Research Laboratory Hitachi Lid.
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Ono Kazuo
Central Research Laboratory Hitachi Ltd.
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Sato Takehiko
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Kuroiwa Takeharu
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Tokumitsu Eisuke
Precision & Intelligence Laboratory, Tokyo Institute of Technology,
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Kumagai Yuki
Mechanical Engineering Research Laboratory, Hitachi, Lid.
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Takemura Riichiro
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Terao Motoyasu
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Fujisaki Yoshihisa
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Fujisaki Yoshihisa
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Morikawa Takahiro
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Morikawa Takahiro
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Ono Kazuo
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Takaura Norikatsu
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Ishiwara Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
著作論文
- Nondestruetive Characterization of Deep Levels in Semi-Insulating GaAs Wafers Using Microwave Impedance Measurement
- Dependence of Deep Level Concentration on Nonstoiehiometry in MOCVD GaAs
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Hydrogen-related Degradation and Recovery Phenomena in Pb(Zr,Ti)O_3 Capacitors with a Platinum Electrode
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate
- Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors
- IrO_2/Pb(Zr_xTi_)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage
- IrO_2/Pb (Zr_xTi_)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to an Interlayer-Dielectric-Deposition Process
- Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors
- Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond
- Current Status of Nonvolatile Semiconductor Memory Technology
- Organic Ferroelectric Diodes with Long Retention Characteristics Suitable for Non-Volatile Memory Applications
- Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors
- Low-Voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride--trifluoroethylene)
- Characterization of In20Ge15Sb10Te55 Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention
- Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition