Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond
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概要
- 論文の詳細を見る
We report a novel resistive switching ion-plug memory (IPM) with a dual-layered structure containing a solid electrolyte layer (supply layer) that has Cu ions and a resistive switching layer (memory layer). By adopting this structure, IPM achieved higher endurance and longer retention time compared to previously reported solid electrolyte memory because excess Cu deposition was prevented. The conductive path of Cu with a 20 nm$\phi$ was observed by a cross sectional transmission electron microscope analysis. Generation/rupture of the path enables local resistance switching at diameters smaller than 32 nm$\phi$. A set/reset operation that takes 30 ns and an endurance of $10^{9}$ cycles were presented. IPM is a promising candidate for high-density memory for 32-nm technology node and beyond.
- 2009-04-25
著者
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Terao Motoyasu
Central Resarch Laboratory Hitachi Ltd.
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Takemura Riichiro
Central Research Laboratory Hitachi Ltd.
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Takaura Norikatsu
Central Research Laboratory Hitachi. Ltd.
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Fujisaki Yoshihisa
Central Research Laboratory Hitachi Limited
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Ono Kazuo
Central Research Laboratory Hitachi Ltd.
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Takemura Riichiro
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Terao Motoyasu
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Kurotsuchi Kenzo
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Ono Kazuo
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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