Organic Ferroelectric Diodes with Long Retention Characteristics Suitable for Non-Volatile Memory Applications
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概要
- 論文の詳細を見る
Retention performance of organic metal--ferroelectric--insulator--semiconductor (MFIS) diodes composed of random copolymer poly (vinylidene fluoride)-trifluoroethylene [P(VDF-TrFE)] was drastically improved by introducing poly(methyl methacrylate) (PMMA). Only a small amount of PMMA blended to P(VDF-TrFE) copolymer improved the insulating property of thin ferroelectric films. The MFIS diode with 1.65 wt % PMMA-blended P(VDF-TrFE) film achieved the retention time longer than $10^{6}$ s until now and it showed no obvious degradation of switching charge. Precise control of PMMA composition and the crystallization condition made it possible to achieve the above mentioned performance.
- Japan Society of Applied Physicsの論文
- 2008-08-25
著者
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FUJISAKI Yoshihisa
Central Research Laboratory, Hitachi Ltd.
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Ishiwara Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Fujisaki Sumiko
Hitachi Ltd. Tokyo Jpn
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Fujisaki Sumiko
Hitachi Ltd.
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Fujisaki Sumiko
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokoham
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Fujisaki Yoshihisa
Central Research Laboratory Hitachi Ltd.
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Fujisaki Yoshihisa
Central Research Laboratory Hitachi Limited
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