Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors

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概要

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• Oxygen diffusion through the grain boundaries of Pt films during the crystallization annealing of Pb(Zr, Ti)O_3 (PZT) was investigated for the stacked structure of PZT/Pt/TiN. If the Pt film was sputtered on the TiN film by an in-vacuum process, then columnar (111)-oriented grains were grown with continuous grain boundaries normal to the substrate. On the other hand, a Pt film deposited on a TiN film exposed to air after the TiN deposition consisted of granular grains with a random orientation, because the Pt film was grown on the native oxide surface of the TiN film. The degree of oxygen diffusion in the Pt film deposited on the exposed TiN film was lower than that on the nonexposed TiN film after the PZT was crystallized at 650℃ in O_2. Differences in the grain boundary structure, such as the diffusion length, are considered to determine the oxygen diffusion rate.

• 社団法人応用物理学会の論文
• 1997-09-15

著者

• Hiratani M

  Central Research Laboratory Hitachi Ltd.

• Hiratani M

  Central Research Laboratory Hitachi Ltd

• Hiratani Masahiko

  Central Research Laboratory Hitachi Ltd.

• FUJISAKI Yoshihisa

  Central Research Laboratory, Hitachi Ltd.

• MIKI Hiroshi

  Department of Pathology, Kagawa Medical University

• Matsui Yasushi

  Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat

• MATSUI Yuichi

  Central Research Laboratory, Hitachi, Ltd.

• Suga Mitsuo

  Central Research Laboratory Hitachi Ltd.

• Muto Y

  The Institute For Materials Research Tohoku University

• Miura H

  Hitachi Ltd. Tsuchiura‐shi Jpn

• Miki Hiroshi

  Central Research Laboratory Hitachi Ltd.

• Fujisaki Y

  R&d Association For Future Electron Devices

• Fujisaki Yoshihisa

  Central Research Laboratory Hitachi Limited

• Miki Hiroshi

  Central Research Laboratory Hitachi Limited

• Fujisaki Yoshihisa

  R&D Association for Future Electron Devices

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