Study of Surface Reaction Probability of CF_x Radicals by Trench Deposition Method

概要

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The surface reaction probabilities of CF_x radicals are determined with a trench deposition method for C:H:F films deposited by the discharge in a CF_4/H_2 mixture. It is found that the overall sticking probability of CF_x is β=0.1-0.2 and 0.2 for substrates placed on the reactor wall and on the earth electrode, respectively. The respective roles of the sticky and less-sticky radicals (probably CF and CF_2, respectively) are derived by making use of the film profiles, and their sticking probabilities are found to be about 1.0 and 0.05, respectively. Moreover, it is shown that the method is applicable to estimate the contribution of the ion-enhanced deposition, e.g., 50-60% of the film thickness for the present condition of the gas flow ratio of CF_4/H_2=19/16 at the rf discharge pressure of 0.4 Torr.
社団法人応用物理学会の論文
1991-11-15