Stress Analysis in Silicon Substrates during Thermal Oxidation
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概要
- 論文の詳細を見る
The stress development mechanism during local thermal oxidation of a silicon substrate is discussed based on the predicted results using a two-dimensional thermal oxidation process simulation program OXSIM2D developed by the authors. Predicted stress change during the oxidation agrees well with the measured data obtained by means of micro-Raman spectroscopy. There are three main factors which play important roles in stress delelopment in the newly grown oxide film and the substrate. They are the volume expansion of the oxide film, the viscosity of the oxide film, and the bending of the silicon nitride film which is used as the oxidation barrier. These factors give rise to the complicated stress distribution and the stress change near the edge of the nitride film during thermal oxidation.
- 一般社団法人日本機械学会の論文
- 1996-01-15
著者
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Ohta H
Okayama Univ. Dental School Okayama Jpn
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MIURA Hideo
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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MIKI Hiroshi
Department of Pathology, Kagawa Medical University
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Ohta H
Ibaraki Univ. Coll. Agriculture Ibaraki Jpn
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Saito Naoto
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Miura H
Hitachi Ltd. Tsuchiura‐shi Jpn
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Okamoto Noriaki
Mechanical Engineering Research Laboratory Hitachi Ltd.
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OHTA Hiroyuki
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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Okamoto Noriaki
Mechanical Engineering Resarch Laboratory Hitachi Ltd.
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Ohta Hiroyuki
Mechanical Engineering Research Laboratory Hitachi Ltd.
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Miura Hideo
Mechanical Engineering Research Laboratory Hitachi Lid.
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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