Robust and Cost-Effective MIS-Al_2O_3/SiON Double-Layered Capacitor Technology for Sub-90nm DRAMs
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Miki Hiroshi
Central Research Laboratory Hitachi Ltd.
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Hamamura Hirotaka
Central Research Laboratory Hitachi Ltd.
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TONOMURA Osamu
Central Research Laboratory, Hitachi Ltd.
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Tonomura Osamu
Central Research Laboratory Hitachi Ltd.
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
関連論文
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- Hydrogen-related Degradation and Recovery Phenomena in Pb(Zr,Ti)O_3 Capacitors with a Platinum Electrode
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors
- Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O_3 Thin Film Capacitors with IrO_2 Top Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- IrO_2/Pb(Zr_xTi_)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage
- Effect of H_2 Annealing on a Pt/PbZr_xTi_0_3 Interface Studied by X-Ray Photoelectron Spectroscopy
- Stress Analysis of Transistor Structures Considering the Internal Stress of Thin Films
- Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors
- Stress Analysis in Silicon Substrates during Thermal Oxidation
- Residual Stress in Silicon Substrate with Shallow Trenches on Surface after Local Thermal Oxidation
- Residual Stress Measurement in Silicon Substrates after Thermal Oxidation
- Uniform Ultra-Thin Pb(Zr, Ti)O_3 Films Formed by Metal-Organic Chemical Vapor Deposition and Their Electrical Characteristics ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Robust and Cost-Effective MIS-Al_2O_3/SiON Double-Layered Capacitor Technology for Sub-90nm DRAMs
- Electro-Luminescence from Ultra-Thin Silicon
- Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates
- Suppression of Leakage Current of Metal--Insulator--Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure