Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Torii Kazuyoshi

  Central Research Laboratory Hitachi Lid.

• Mine Toshiyuki

  Central Research Laboratory Hitachi Ltd

• Miki Hiroshi

  Central Research Laboratory Hitachi Limited

• Tega Naoki

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

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