Effective Electron Mobility Reduced by Remote Charge Scattering in High-K Gate Stacks : Short Note
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-07-15
著者
-
Hiratani Masahiko
Central Research Laboratory Hitachi Ltd.
-
TORII Kazuyoshi
Central Research Laboratory, Hitachi, Ltd.
-
Saito Shin-ich
Central Research Laboratory Hitachi Ltd.
-
SHIMAMOTO Yasuhiro
Central Research Laboratory, Hitachi, Ltd.
-
Saito S
Central Research Laboratory Hitachi Ltd.
-
Torii K
Central Research Laboratory Hitachi Ltd.
-
Torii Kazuyoshi
Central Research Laboratory Hitachi Lid.
-
Torii Kazuyoshi
Central Research Laboratory Hitachi Ltd.
-
Shimamoto Yasuhiro
Central Research Laboratory Hitachi Ltd.
関連論文
- Strain-Imaging Observation of Pb(Zr, Ti)O_3 Thin Films
- Strain Imaging of Lead-Zirconate-Titanate Thin Film by Tunneling Acoustic Microscopy
- Tetragonal High-T_c Superconductor in the System Ba_2Y(CuGa_x)_3O_
- Low-Temperature Annealing Effect on Bi-Sr-Ca-Cu-O Thin Films Prepared by Layer-by-Layer Deposition
- Effect of CHF_3 Addition on Reactive Ion Etching of Aluminum Using Inductively Coupled Plasma
- Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition(High-κ Gate Dielectrics)
- Interfacial Reaction of SrRuO_3 Prepared Directly on TiN
- Fabrication of Pd(Zr, Ti)O_3 Microscopic Capacitors by Electron Beam Lithography
- SrRuO_3 Thin Films Grown under Reduced Oxygen Pressure
- Orientation and Crystal Structure of SrTiO_3 Thin Films Prepared by Pulsed Laser Deposition
- Electrical Characteristics of HoBa_2Cu_3O_-La_Ba_Cu_3O_-HoBa_2Cu_3O_ Junctions with Planar-Type Structures
- Electro-Luminescence from Ultra-Thin Silicon
- Synthesis, Monolayer Formation, and Control of Electrical Characteristics of 3-nm-Diameter Gold Nanoparticles
- Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
- Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
- Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere
- Thermal Stability of a RuO_2 Electrode Prepared by DC Reactive Sputtering
- Hydrogen Reduction Properties of RuO_2 Electrodes
- Dielectric Properties of RF-Magnetron-Sputtered (Ba, Pb)(Zr, Ti)O_3 Thin Films
- Single-Target Sputtering Process for Lead Zirconate Titanate Thin Films with Precise Composition Control
- Formation of Ammonium Salts and Their Effects on Controlling Pattern Geometry in the Reactive Ion Etching Process for Fabricating Aluminum Wiring and Polysilicon Gate
- A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
- A High-Endurance Read/Write Scheme for Half-V_cc Plate Nonvolatile DRAMs with Ferroelectric Capacitors(Special Issue on Nonvolatile Memories)
- A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation
- Effective Electron Mobility Reduced by Remote Charge Scattering in High-K Gate Stacks : Short Note
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Hydrogen-related Degradation and Recovery Phenomena in Pb(Zr,Ti)O_3 Capacitors with a Platinum Electrode
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate
- Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors
- Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O_3 Thin Film Capacitors with IrO_2 Top Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)_3 Dissolved with Tetrahydrofuran Solvent : Surfaces, Interfaoes, and Films
- A Novel Laser Annealing Process for Advanced CMOS with Suppressed Gate Depletion and Ultra-shallow Junctions
- The Atomistic Origin of High Dielectric Constants of Ta_2O_5 Thin Film Deposited on Ru Electrodes
- Superconducting Thin Film of (Nd, Ce)_2CuO_
- Annealing of (Nd, Ca)_2CuO_4 Compounds under High Oxygen Pressure
- Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
- Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors
- Highly Accurate Composition Analysis of (Pb, Zr)TiO_3 Using a Scanning Electron Microscope/Energy Dispersive X-Ray Spectrometer
- Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors
- Electro-Luminescence from Ultra-Thin Silicon
- Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effects of Thin Film Interference on Junction Activation during Sub-Millisecond Annealing
- Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions
- Electron Trap Characteristics of Silicon Rich Silicon Nitride Thin Films
- Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates
- Low-Shrinkage Spin-On Glass for Low Parasitic Capacitance Gap-Filling Process in Advanced Memory Devices
- Self-Aligned Fabrication Process of Electrode for Organic Thin-Film Transistors on Flexible Substrate Using Photosensitive Self-Assembled Monolayers
- Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure