Electro-Luminescence from Ultra-Thin Silicon

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概要

• 論文の詳細を見る

• Ultra-thin single crystal silicon with the (100) surface formed by the local-oxidation-of-silicon (LOCOS) on a silicon-on-insulator (SOI) substrate becomes a quasi-direct band-gap semiconductor due to the quantum mechanical confinement effect. The device is a simple pn diode in a planar structure. Electro-luminescence (EL) has been observed by the lateral carrier injections into the two-dimensional quantum well.

• 2006-07-25

著者

• Arai Tadashi

  Central Research Laboratory Hitachi Ltd.

• MATSUI Yuichi

  Central Research Laboratory, Hitachi, Ltd.

• Shimizu Haruka

  Central Research Laboratory Hitachi Ltd.

• Onai Takahiro

  Central Research Laboratory Hitachi Ltd.

• Sugii Nobuyuki

  Central Research Laboratory Hitachi Ltd.

• Torii Kazuyoshi

  Central Research Laboratory Hitachi Lid.

• Mine Toshiyuki

  Central Research Laboratory Hitachi Ltd

• Hisamoto Digh

  Central Research Laboratory Hitachi Ltd.

• Tsuchiya Ryuta

  Central Research Laboratory Hitachi Ltd.

• Hamamura Hirotaka

  Central Research Laboratory Hitachi Ltd.

• Saito Shinichi

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Sugii Nobuyuki

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Shimizu Haruka

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Hamamura Hirotaka

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

• Arai Tadashi

  Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

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