Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition(<Special Section>High-κ Gate Dielectrics)
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概要
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The process mapping of the ALD process of HfO_2 using HfCl_4 and H_2O is reported. A thickness uniformity better than ±3% was achieved over a 300 mm-wafer at a deposition rate of 0.52Å/cycle. Usually, H_2O purge period is set less than 10 sec to obtain reasonable througbput; however, the amounts of residual impurities (Cl, H) found to be in the order of sub%, and these impurities are piled up near the HfO_2/Si interface. In order to reduce the piled up impurities, we proposed a 2-step deposition in which purge period for initial 10-20 cycles was set to be 90 sec and that for remaining cycles was usual value of 7.5 sec. The leakage current is reduced to 1/10 by using this 2-step deposition.
- 2004-01-01
著者
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies, Inc.
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Torii Kazuyoshi
Central Research Laboratory Hitachi Lid.
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc.
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc. (selete)
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies
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