Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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Makita T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Makita Tetsuro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Ono K
Department Of Applied Chemistry The University Of Tokyo
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Ono K
Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae
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Ono K
Univ. California Ca Usa
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Mikami Noboru
Semiconductor Research Laboratory
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KAWAHARA Toshio
Department of Materials Science and Engineering, National Defense Academy
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies, Inc.
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YAMAMUKA Mikio
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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YUUKI Akimasa
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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ONO Kouichi
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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NAKA Jiro
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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Naka J
Japan Marine Sci. And Technol. Center(jamstec) Yokosuka Jpn
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Yuuki A
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Yuuki Akimasa
Product Development Laboratory Mitsubishi Electric Corporation
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Yuuki Akimasa
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Yamamuka M
Mitsubishi Electric Corp. Hyogo Jpn
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Kawahara T
Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn
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Kawahara T
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc.
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Ono Kouichi
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies
関連論文
- 2.ドライエッチングのモデルとその実験検証(ドライエッチングの科学と技術の新局面)
- 4.高誘電率(High-k)材料のドライエッチング(ドライエッチングの科学と技術の新局面)
- Dielectric Properties of (Ba,Sr)TiO_3 Thin Films Deposited by RF Sputtering
- Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
- Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- 1.はじめに(ドライエッチングの科学と技術の新局面)
- 8.おわりに(ドライエッチングの科学と技術の新局面)
- 最近の展望 マイクロプラズマスラスター
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- The Measurement of Annealing Cycle Effect of Si-Ge-Au Amorphous Thin Film with Anomalously Large Thermoelectric Power by Using Photoacoustic Spectroscopy
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- Effect of Impurity at SiO_2/Si Interface on 2D Hole Gas
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- Spin State Analysis of Epitaxial Mn Compound Films Using High Resolution X-Ray Fluorescence
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- Annealing Temperature Dependence of the Amorphous Structure of Amorphous Si-Ge-Au Thin Films
- Anomalous Large Thermoelectric PoWer on Heavily B-Doped SiGe Thin Films with Thermal Annealing : Structure and Mechanical and Thermal Properties of Condensed Matter
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