The Effect of Surface Cleaning by Wet Treatments and Ultra High Vacuum Annealing for Ohmic Contact Formation of P-Type GaN

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-07-30

著者

• 斧 高一

  京都大学大学院工学研究科

• Ono K

  Univ. Tokyo Tokyo Jpn

• Ono Kanta

  Department Of Engineering The University Of Tokyo

• Ono K

  Department Of Applied Chemistry The University Of Tokyo

• Ono K

  Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae

• Ono K

  Univ. California Ca Usa

• OSHIMA Masaharu

  Department of Engineering, University of Tokyo

• Oshima M

  Department Of Applied Chemistry The University Of Tokyo

• FUJIOKA Hiroshi

  Department of Applied Chemistry, The University of Tokyo

• WAKI Ichitaro

  Department of Applied Chemistry, The University of Tokyo

• MIKI Hisayuki

  Chichibu Research Laboratory, Showa Denko

• FUKIZAWA Akira

  Chichibu Research Laboratory, Showa Denko

• Ono K

  The Faculty Of Engineering Ehime University

• Waki Ichitaro

  Department Of Applied Chemistry The University Of Tokyo

• Miki Hisayuki

  Chichibu Research Laboratory Showa Denko

• Fukizawa Akira

  Chichibu Research Laboratory Showa Denko

• Fujioka H

  Univ. Tokyo Tokyo Jpn

• Fujioka Hiroshi

  大日本製薬

• Ono Kanta

  Department Of Applied Chemistry The University Of Tokyo

• Oshima Masaharu

  Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo

• Fujioka Hiroshi

  Department Of Applied Chemistry The University Of Tokyo

• OSHIMA Masaharu

  Department of Applied Chemistry and JST-CREST, The University of Tokyo

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