Enhanced Magnetic Valve Effect and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Transistor

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概要

• 論文の詳細を見る

• We report on rnagnetotransport properties of a ferrornagnetic single electron transistor (SET)in which tunnel resistance R-r changes about 3.6-3.8% by the magnetic valve effect, We find thatthe magnetic valve effect is enhanced in the Coulomb blockade region: The magnetoresistance(MR) ratio of the off-state of the SET is more than 40%, while that of the on-state is 4.O%.A mechanism of enhancement by the higher-order tunneling process is proposed. Furtherrnore,we find a monotonic phase shift of the Coulomb oscillations induced by the magnetic field,which results in magneto-Coulomb oscillations with fixed gate voltage, A simple explanation forthis effect based on a magnetic-field-induced change in the Fermi energy of the spin-polarizedelectrons in an island electrode is given.

• 社団法人日本物理学会の論文
• 1997-05-15

著者

• 斧 高一

  京都大学大学院工学研究科

• Ono K

  Department Of Applied Chemistry The University Of Tokyo

• Ono K

  Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae

• Ono K

  Univ. California Ca Usa

• Ootuka Youiti

  Cryogenic Center University Of Tokyo

• Ootuka Youiti

  Cryogenic Center The University Of Tokyo

• SHIMADA Hiroshi

  Cryogenic Center, The University of Tokyo

• Shimada H

  Department Of Physics Chuo University

• ONO Keiji

  Cryogenic Center,University of Tokyo

• Ono K

  The Faculty Of Engineering Ehime University

• Shimada Hiroshi

  Cryogenic Center Univesity Of Tokyo

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