Spin Polarization and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Devices

スポンサーリンク

概要

• 論文の詳細を見る

• The raaagneto-Cotrloraub oscillation dtre to the single electron repoptrlation indtmced by externalmagnetic field, observed in 21 f'erroraaagnetic single electron transistor is exaztained in variotrsferrott?agnetic single electron devices. In case of' dotrb[e- and triple-jtrnction devices rnade of' Niand Co electrodes, the single electron repoptrlation alxvays occvrrs frotaa Ni to Co electrodes xvithincreasing zaaagnetic field, irrespective of the configtrrations of' tlae electrodes. Tlae period of' thenaagneto-Cotrloraub oscillation is proportional to the single electron ch?trging energy. All these['eatures are consistently expl?tined by the unechanistn that the Zeenaan ef['ect indttces chsrnges oJ'the Fermai energy of the ferrottaagnetic rtaetal hatxzing a non-zero spin polarizations. Experirtaentallydeterraained spin polarizations are negative for both Ni and Co and the tnagnitude is larger forXi than Co as expected frona the calctrlated band strttctures.

• 社団法人日本物理学会の論文
• 1998-08-15

著者

• 斧 高一

  京都大学大学院工学研究科

• 斧 高一

  京大 大学院工学研究科

• ONO Katsuji

  Fujitsu Laboratories Ltd.

• Ono K

  Department Of Applied Chemistry The University Of Tokyo

• Ono K

  Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae

• Ono K

  Univ. California Ca Usa

• Ootuka Youiti

  Cryogenic Center University Of Tokyo

• Ootuka Youiti

  Cryogenic Center The University Of Tokyo

• SHIMADA Hiroshi

  Cryogenic Center, The University of Tokyo

• Shimada H

  Department Of Physics Chuo University

• ONO Keiji

  Cryogenic Center,University of Tokyo

• Ono K

  The Faculty Of Engineering Ehime University

• Shimada Hiroshi

  Cryogenic Center Univesity Of Tokyo

関連論文

• 2.ドライエッチングのモデルとその実験検証(ドライエッチングの科学と技術の新局面)
• 4.高誘電率(High-k)材料のドライエッチング(ドライエッチングの科学と技術の新局面)
• Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
• Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
• Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
• Superconductive-Conjugate Photoconductivity in Host Insulators of the Y_-Ba_x-Cu_3-O_z System
• Hall Mobility of Positive Holes in Cu_2O
• A Novel Spectral Photoconductivity of the Ca-Sr-Bi-Cu-O System Correlative with Superconductivity
• A Novel Spectral Photoconductivity of the Ba-Pb-Bi-O System Correlative with Superconductivity
• A Novel Spectral Photoconductivity of the La-Cu-O Correlative with Superconductivity
• A Novel Spectral Photoconductivity of the Y-Cu-O,Y-Ba-Cu-O Correlative with Superconductivity
• 1.はじめに(ドライエッチングの科学と技術の新局面)
• 8.おわりに(ドライエッチングの科学と技術の新局面)
• 最近の展望 マイクロプラズマスラスター
• 第58回気体エレクトロニクス会議(58th Gaseous Electronics Conference)
• An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching
• マイクロプラズマスラスターの研究開発 (特集 宇宙高温工学)
• 誘導結合型フルオロカｰボンプラズマを用いた高誘電率HfO_2薄膜のエッチング
• 半導体プラズマプロセスシミュレーションとTCAD
• プラズマCVDと溶媒処理を用いたフルオロカーボン系多孔質構造Low-K薄膜の作成
• Numerical Analysis of the Electromagnetic Fields in a Microwave Plasma Source Excited by Azimuthally Symmetric Surface Waves
• Si ドライエッチング技術
• 3.1 プラズマエッチング : 3. プラズマプロセス装置におけるプラズマ・表面相互作用(プラズマ・表面相互作用) : 多様なPSI現象
• Two-Dimensional Arrays of Small Josephson Junctions with Regular and Random Defects
• Static Magnetic Susceptibility of Si:P across the Metal-Insulator Transition
• 宇宙マイクロ・ナノ工学とシリコンナノサテライト連携研究計画 (特集 宇宙高温工学)
• 先端プラズマエッチングプロセスのモデリングと体系化
• Magnetization of Si:P across the Metal-Insulator Transition
• ULSIデバイス作製プロセスにおけるプラズマ-固体表面相互作用
• Superconductivity in Single-Crystalline Sr_La_xTiO_3
• X-Ray Photoelectron Spectroscopy Study of Hetero-Interface between Manganese Pnictide and Mn-Zn Ferrite
• Epitaxial Growth of InAs on Single-Crystalline Mn-Zn Ferrite Substrates
• 27aW-12 Electronic structures of the CDW phase of in linear chains on Si(111)
• Thermal Desorption Spectroscopy of (Ba, Sr)TiO_3 Thin Films Prepared by Chemical Vapor Deposition
• Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
• Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Quantum Charge Fluctuations in Quantum Dots : Condensed Matter: Electronic Properties, etc.
• Effect of Impurity at SiO_2/Si Interface on 2D Hole Gas
• Generalized Grazing Incidence-Angle X-Ray Diffraction Studies on InAs Quantum Dots on Si(100) Substrates
• The Effect of Surface Cleaning by Wet Treatments and Ultra High Vacuum Annealing for Ohmic Contact Formation of P-Type GaN
• Spin State Analysis of Epitaxial Mn Compound Films Using High Resolution X-Ray Fluorescence
• Chemical States of Piled-up Phosphorus and Arsenic Atoms at the SiO2/Si Interface (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
• Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
• Characterization of Phosphorus Pile-Up at the SiO_2/Si Interface
• Dependence of Local Cell Density on Concentric Ring Colony Formation by Bacterial Species Bacillus subtilis (Cross-disciplinary Physics and Related Areas of Science and Technology)
• Dynamical Properties of Transient Spatio-Temporal Patterns in Bacterial Colony of Proteus mirabilis
• In Situ Fourier Transform Infrared Measurements of Si Surface and Bulk Plasmas in Cl_2/O_2 and HBr/O_2 Electron Cyclotron Resonance Plasma Etching: Influence of Oxygen on Reaction Products
• In situ Monitoring of Product Species in Plasma Etching by Fourier Transform Infrared Absorption Spectroscopy
• Anisotropic Etching of n^+-Polysilicon Using Beam Plasmas Generated by Gas Puff Plasma Sources
• Chemical Kinetics of Chlorine in Electron Cyclotron Resonance Plasma Etching of Si ( Plasma Processing)
• Multicusp Electron-Cyclotron-Resonance Plasma Source Working with Microwaves Radially Injected through an Annular Slit
• Measurement of the Cl Atom Concentration in RF Chlorine Plasmas by Two-Photon Laser-Induced Fluorescence
• Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2 : Etching and Deposition Technology
• Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2
• Periodic Colony Formation by Bacterial Species Bacillus subtilis : Cross-Disciplinary Physics
• Spin Polarization and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Devices
• Magneto-Coulomb Oscillation in Ferromagnetic Single Electron Transistors
• Enhanced Magnetic Valve Effect and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Transistor
• Magnetoresistance of Ni/NiO/Co Small Tunnel Junctions in Coulomb Blockade Regime
• A New Fabrication Method for Ultra Small Tunnel Junctions
• Modal-Matching Analysis of Loss in Bent Graded-Index Optical Slab Waveguides
• Coupled-Mode Analysis of Loss in Bent Single-Mode Optical Fibers
• Coupled-Mode Analysis of Bent Planar Waveguides with Finite Claddings
• Pure Bend Loss of TM Modes in Slab Optical Waveguides Bounded by Magnetic Walls
• Pure Bend Loss Evaluation of Slab Waveguide with Finite Claddings by Coupled-Mode Theory
• Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
• Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
• Effects of Post-Annealing on Dielectric Properties of (Ba, Sr)TiO_3 Thin Films Prepared by Liquid Source Chemical Vapor Deposition(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
• Influence of Buffer Layers and Barrier Metals on Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
• Mechanisms of Synchrotron X-Ray Irradiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
• A Mass Spectrometric Study of Reaction Mechanisms in Chemical Vapor Deposition of (Ba, Sr)TiO_3 Films
• (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes
• Reaction Mechanism and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
• Surface Morphologies and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition
• Phase Diagram for Superconductor-Insulator Transition in Single Small Josephson Junctions with Shunt Resistor
• Gate Voltage Dependence of the Resistance of a Two-Dimensional Array of Small Tunnel Junctions ( Quantum Dot Structures)
• Chemical Potential Dependence of Resistance of Two-Dimensional Array of Small Tunnel Junctions
• Transmission Spectra of Third Sound in a Fibonacci Lattice
• Anomalous Magnetoresistance of Partially Superconducting Mesoscopic Loop
• 超小型高周波イオン推進機におけるプラズマ源の周波数依存性
• 電気的手法を用いた物理的Si基板ダメージのプラズマプロセス依存性の検討(プロセス科学と新プロセス技術)
• 物理的プラズマダメージによるMOSFETバラツキ増大予測のための包括モデル(プロセス科学と新プロセス技術)
• Superconductor-Insulatoer Transition in Granular Films of Tin
• マイクロプラズマスラスターの研究開発
• 宇宙マイクロ・ナノ工学とシリコンナノサテライト連携研究計画
• 古典的分子動力学計算による物理的プラズマダメージ形成機構の検討 : Fin型MOSFETでの欠陥生成機構(プロセス科学と新プロセス技術)
• プラズマチャージングダメージがMOSFETのRandom Telegraph Noise特性に及ぼす影響(プロセス科学と新プロセス技術)

もっと見る 閉じる

スポンサーリンク