Static Magnetic Susceptibility of Si:P across the Metal-Insulator Transition
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概要
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The static magnetic susceptibility of phosphorus doped silicon is measured over thetemperature range from 10 mK to 4.2 K at phosphorus concerntrations from 5.3 X 10"to 2.8 X 10" cm '. The paramagnetic deviation of susceptibility is observed forsamples V3 4.5 x 10" cm ' at low temperatures and the donor susceptibility z. variescontinuously across the metal-insulator transition. The temperature dependence of )(.is roughly described by T ' law for the lightly metallic samples as well as for the non-metallic ones. The results are discussed in connection with the theories and the experiments of ESR and specific heat.[magnetic susceptibility, Si : P, Anderson localization, metal-insulator transi- ]l lion, random system, low temperature, experimentl
- 社団法人日本物理学会の論文
- 1990-05-15
著者
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Ootuka Youiti
Cryogenic Center University Of Tokyo
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Ootuka Youiti
Cryogenic Center The University Of Tokyo
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MATSUNAGA Noriaki
Cryogenic Center,University of Tokyo
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Matsunaga Noriaki
Cryogenic Center University Of Tokyo
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