Magnetization of Si:P across the Metal-Insulator Transition
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概要
- 論文の詳細を見る
The magnetization of phosphorus doped silicon is measured in the magnetic fields up to 5 kG over the temperature range from 10 mK to 4.2 K at phosphorus concentrations from 5.3×10^<17> to 4.5×10^<18> cm^<-3>. The dependence on temperature and on magnetic field is explained by the localized spin model even in the lightly metallic region.
- 社団法人日本物理学会の論文
- 1993-05-15
著者
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Ootsuka Y
Univ. Tokyo Tokyo
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Ootuka Youiti
Cryogenic Center University Of Tokyo
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Ootuka Youiti
Cryogenic Center The University Of Tokyo
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MATSUNAGA Noriaki
Cryogenic Center,University of Tokyo
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Matsunaga N
Cryogenic Center University Of Tokyo
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Matsunaga Noriaki
Cryogenic Center University Of Tokyo
関連論文
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