Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-06-20

著者

• Ishikawa T

  Riken Harima Institute

• Saito J

  Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn

• Saito Junji

  Fujitsu Laboratories Limited

• ONO Katsuji

  Fujitsu Laboratories Ltd.

• NANBU Kazuo

  Fujitsu Laboratories Ltd.

• KONDO Kazuo

  Fujitsu Laboratories Ltd.

• ISHIKAWA Tomonori

  Fujitsu Laboratories LTD.

• Saito Junji

  Fujitsu Laboratories Ltd.

• Ono K

  Department Of Applied Chemistry The University Of Tokyo

• Ono K

  Univ. California Ca Usa

• Nanbu Kazuo

  Fujitsu Laboratories Limited

• Ono K

  Univ. Tsukuba Ibaraki Jpn

• Komeya Katutoshi

  Graduate School Of Environment And Information Science Yokohama National University

• Ishikawa T

  National Space Dev. Agency Of Japan Ibaraki Jpn

• Ishikawa T

  Kyushu Univ. Fukuoka Jpn

• Saito J

  New Business Development Department Nikon Corporation In Hitachi Maxell

• Saito Jun

  Nikon Corp. New Business Development Department

• Kondo K

  Fujitsu Laboratories Ltd.

• Ishikawa Tetsuya

  Riken Harima Institute

• Ishikawa Tomonori

  Fujitsu Limited

• Ishikawa Tomonori

  Fujitsu Laboratories Limited

• Ishikawa Takatoshi

  Department Of Applied Physics Faculty Of Science Fukuoka University

• Nanbu K

  Fujitsu Laboratories Ltd.

• Kondo Kazuo

  Fujitsu Laboratories Limited

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