Electrical Properties of Si-Doped Al_xGa_<1-x>As Layers Grown by MBE
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-11-20
著者
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Ishikawa T
Riken Harima Institute
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Saito J
Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn
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Saito Junji
Fujitsu Laboratories Limited
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ISHIKAWA Tomonori
Fujitsu Laboratories LTD.
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Saito Junji
Fujitsu Laboratories Ltd.
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Hiyamizu Satoshi
Fujitsu Limited
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Saito J
New Business Development Department Nikon Corporation In Hitachi Maxell
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Saito Jun
Nikon Corp. New Business Development Department
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Ishikawa Tomonori
Fujitsu Limited
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Ishikawa Tomonori
Fujitsu Laboratories Limited
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Sasa S
Fujitsu Laboratories Ltd.
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Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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