AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Endoh Akira

  National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• Endoh A

  Fujitsu Lab. Ltd. Atsugi Jpn

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Yamashita Yoshimi

  Fujitsu Laboratories Ltd.

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• Hikosaka K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• MATSUI Toshiaki

  National Institute of Info. & Com. Tech.

• HIROSE Nobumitsu

  National Institute of Information and Communications Technology

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• Matsui Toshiaki

  Communications Research Laboratory Ministry Of Posts And Telecommunications

• Mimura Takashi

  National Institute Of Information And Communications Technology (nict)

• Matsui Toshiaki

  National Institute Of Information And Communications Technology (nict)

• Hirose Nobumitsu

  National Inst. Of Information And Communications Technology

• Yamashita Yoshimi

  Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

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