AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
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概要
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We report on state-of-the-art AlGaN/GaN heterostructure field-effect transistor (HFET) technology in the scope of millimeter-wave applications. 60-nm-long-gate HFETs having 4- and 6-nm-thick Al0.4Ga0.6N barrier layers and SiN passivation layers formed by catalytic chemical vapor deposition (Cat-CVD) were fabricated on 4H-SiC substrates. Both structures had low sheet resistances of 200--220 $\Omega$/sq that were due to not only high mobilities of 1900--2000 cm2/(V$\cdot$s) but also high electron densities of $(1.4{\mbox{--}}1.7)\times10^{13}$ cm-2, which were provided by the high-Al-composition barrier layers and the Cat-CVD SiN. The devices with the 4- and 6-nm-thick barriers had maximum drain current densities of 1.4 and 1.6 A/mm and peak extrinsic transconductances of 448 and 424 mS/mm, respectively. Maximum $f_{\text{T}}$ and $f_{\text{max}}$ reached 190 and 251 GHz, respectively.
- Japan Society of Applied Physicsの論文
- 2008-02-25
著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Mimura T
National Institute Of Information And Communications Technology
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Higashiwaki M
National Institute Of Information And Communications Technology
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HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
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MIMURA Takashi
National Institute of Information and Communications Technology
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