HIKOSAKA Kohki | Fujitsu Laboratories Ltd.

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概要

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著作論文

Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates
High Electron Mobility Transistor Logic
Selective Dry Etching of AlGaAs-GaAs Heterojunction
Enhancement-Mode High Electron Mobility Transistors for Logic Applications
Hyperon Nonleptonic Decays Revisited
0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
The Mass Levels of Q^2 ^2 States in (3+1) Dimensional Lattice Gauge Theory
Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
Coherency Dependence of Projection Printing Method Using a Phase-Shifting Mask
Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators

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