InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance

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概要

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• We fabricated 25-nm-gate lattice-matched InAlAs/InGaAs high electron mobility transistors (HEMTs) with a very short gate-channel distance. Using the two-step-recessed gate technique, we reduced the gate-channel distance to 4 nm. We found that the cutoff frequency $f_{\text{T}}$ increases with decreasing gate-channel distance $d$. This phenomenon can be explained by an increase in electron velocity under the gate with decreasing $d$. We obtained an $f_{\text{T}}$ of 500 GHz with a $d$ of 4 nm. We also fabricated 25-nm-gate pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs using the same processing technique, and obtained an $f_{\text{T}}$ of 562 GHz with a $d$ of 4 nm. This $f_{\text{T}}$ is the highest value yet reported for a transistor of any type.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• MATSUI Toshiaki

  Communication Research Laborator

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• Yamashita Yoshimi

  Fujitsu Laboratories Ltd.

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• SHINOHARA Keisuke

  Communications Research Laboratory

• Matsui Toshiaki

  Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan

• Shinohara Keisuke

  Communications Research Laboratory, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan

• Yamashita Yoshimi

  Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

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