Hiyamizu Satoshi | Graduate School Of Engineering Science Osaka University

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概要

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著作論文

Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy
Super-Flat Interfaces in Pseudomorphic In_xGa_As/Al_Ga_As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy(Structure, Interfaces, and Films)
High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators

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