Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy(Structure, Interfaces, and Films)

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概要

• 論文の詳細を見る

• We have investigated the transport properties of electron gas in a GaAs/(GaAs)_4(AlAs)_2 quantum well with a regularly corru-gated upper interface formed on (775)B-oriented GaAs substrates by molecular beam epitaxy (MBE). The electron mobility perpendicular to the corrugation (μ_1) was suppressed to 1/70th of that parallel to the corrugation (μ_1) for a quantum well with a well width of L_w = 5 nm at a temperature of 10 K, and μ_ with a thin L_w of 5 nm monotonically increased with increasing temperature (10-300 K). These results suggest that the lateral potential induced by the thickness modulation is so strong in the nominally 5-nm-thick quantum well that the electron gas has a quasi-one-dimensional nature.

• 社団法人応用物理学会の論文
• 2001-10-01

著者

• SHIMOMURA Satoshi

  Graduate School of Engineering Science, Osaka University

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Shimomura S

  Graduate School Of Science And Engineering Ehime University

• Shimomura Satoshi

  Department Of Physical Science Graduate School Of Engineering Science Osaka University

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• KITADA Takahiro

  Osaka University

• KITADA Takahiro

  Graduate School of Engineering Science, Osaka University

• Ohno Yasuhide

  Graduate School Of Engineering Science Osaka University

• Kitada Tadayoshi

  Institute Of Technology And Science University Of Tokushima

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