High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る

• High-quality In_xGa_<1-x>As layers (0.505≤x≤0.545) were grown on (411)A-oriented InP substrates by molecular beam epitaxy (MBE). High-resolution X-ray diffraction (HRXRD) measurements of the (411)A In_xGa_<1-x>As layers showed no relaxation of lattice mismatch, and residual strain components observed in the (411)A InGaAs layers were in good agreement with calculated results based on the constrained pseudomorphic layer model on high index substrates proposed by Yang et al. [Appl. Phys. Lett. 65 (1994) 2789]. Photoluminescence (PL) linewidth of the (411)A InGaAs layer with In content (x) of 0.505 was 1.9 meV at 12 K, which is less than half that (4.0 meV) of an InGaAs layer simultaneously grown on a (100) InP substrate, and almost the same as the optimum value (1.2-3.0 meV) reported for InGaAs layers grown on (100) InP substrates. These results indicate that high-quality InGaAs layers can be easily obtained by MBE growth on (411)A InP substrates.

• 社団法人応用物理学会の論文
• 1999-04-15

著者

• SHIMOMURA Satoshi

  Graduate School of Engineering Science, Osaka University

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Ohashi M

  Tohoku Univ. Sendai Jpn

• Shimomura S

  Graduate School Of Science And Engineering Ehime University

• Shimomura Satoshi

  Department Of Physical Science Graduate School Of Engineering Science Osaka University

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• KITADA Takahiro

  Osaka University

• KITADA Takahiro

  Graduate School of Engineering Science, Osaka University

• OHASHI Masanobu

  Graduate School of Engineering Science, Osaka University

• Kitada Tadayoshi

  Institute Of Technology And Science University Of Tokushima

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