Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor
スポンサーリンク
概要
- 論文の詳細を見る
We achieved a current gain cutoff frequency ($ f_{\text{T}}$) of 310 GHz at a cryogenic temperature (16 K) in a 195-nm-long gate In0.75Ga0.25As/In0.52Al0.48As high-electron-mobility transistor (HEMT) fabricated on a (411)A-oriented InP substrate. This is 27% higher than that at room temperature (245 GHz). For a corresponding HEMT fabricated on a (100) InP substrate, $ f_{\text{T}}$ of 268 GHz was also obtained at 16 K, which is 15% higher than that obtained at 300 K (233 GHz). For both (411)A and (100) HEMTs, this significant enhancement in low-temperature $ f_{\text{T}}$s was caused by the increased average electron velocity under the gate ($v_{\text{ave}}$), which was mainly due to the suppression of phonon scattering. Furthermore, $ f_{\text{T}}$ as high as 310 GHz was attributed to $v_{\text{ave}}$ of up to $4.9\times 10^{7}$ cm/s at 16 K for the (411)A HEMTs. This is higher than that of the (100) HEMTs ($4.5\times 10^{7}$ cm/s) and is due to the reduced interface roughness scattering of electrons caused by (411)A super-flat InGaAs/InAlAs interfaces (effectively atomically flat heterointerfaces over a wafer-size area).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
-
Yamashita Yoshimi
Fujitsu Laboratories Ltd.
-
WATANABE Issei
National Institute of Info. & Com. Tech.
-
SHINOHARA Keisuke
National Institute of Info. & Com. Tech.
-
KITADA Takahiro
Osaka University
-
SHIMOMURA Satoshi
Osaka University
-
HIYAMIZU Satoshi
Osaka University
-
MATSUI Toshiaki
National Institute of Info. & Com. Tech.
-
MIMURA Takashi
National Institute of Information and Communications Technology
-
Mimura Takashi
National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
-
Endoh Akira
National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
-
Shimomura Satoshi
Osaka University, 3-1 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
-
Shinohara Keisuke
National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
-
Watanabe Issei
National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
-
Hiyamizu Satoshi
Osaka University, 3-1 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
-
Kitada Takahiro
Osaka University, 3-1 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
-
Matsui Toshiaki
National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
-
Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
関連論文
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
- Monte Carlo simulations of electron transport in In0.52Al0.48As/In0.75Ga0.25As high electron mobility transistors at 300 and 16K
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- High Performance AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators (Special Issue: Solid State Devices & Materials)
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
- DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
- Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
- Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
- Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
- E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
- Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
- High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy
- Super-Flat Interfaces in Pseudomorphic In_xGa_As/Al_Ga_As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
- Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy(Structure, Interfaces, and Films)
- Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
- AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
- Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
- 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
- FEM Analysis for Nonuniform Yielding Processes in Mild Steel Plates under Stretching
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
- A Simple Cylindrical Retarding Field Energy Analyzer
- InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
- Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy
- Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations
- High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
- Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor
- InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors
- Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators
- Erratum: "High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors"
- Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors
- AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates
- Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy