Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires

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概要

• 論文の詳細を見る

• To clarify the dependence of the exciton absorption recovery time on wire width in multiple quantum well (MQW) narrow wires, we performed numerical calculations using a simple model with damage effects. The drastic reduction in recovery time for heavily damaged wires is attributed to the formation of a "dead layer", in which carriers vanish almost immediately, near the sidewalls. For lighter damage, the recovery time curve shifts downward with increasing damage as if surface recombination velocity had been increased. The carrier density profile for lighter damage indicates that the optical nonlinearity is not degraded for light damage although the recovery time is reduced.

• 社団法人応用物理学会の論文
• 1993-01-30

著者

• Endoh Akira

  National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• MUTO Shunichi

  Fujitsu Laboratories Ltd.

• Muto Shigeki

  Department Of Physics School Of Science Tokai University

• Endoh A

  Fujitsu Lab. Ltd. Atsugi Jpn

• 武藤 真三

  山梨大学

• Muto S

  Kek Ibaraki

• ARIMOTO Hiroshi

  Fujitsu Laboratories Ltd.

• Arimoto H

  Fujitsu Lab. Ltd. Atsugi Jpn

• Arimoto Hiroshi

  Fujitsu Laboratories Limited

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