InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)

スポンサーリンク

概要

• 論文の詳細を見る

• This paper discusses our newly developed technology for making GaAs/InGaAs/GaAs Tetrahedral-Shaped Recess (TSR) quantum dots. The heterostructures were grown by low-pressure MOVPE in tetrahedral-shaped recesses created on a (111)B oriented GaAs substrate using anisotropic chemical etching. We examined these structures by using cathodoluminescence (CL)measurements, and observed lower energy emissions from the bottoms of, and higher energy emissions from the walls of the TSRs.This suggests carrier confinement at the bottoms with the lowest potential energy. We carried out microanlaysis of the structures by using TEM and EDX, and found an In-rich region that had grown vertically from the bottom of the TSR with a (111)B-like bond configuration. We also measured a smaller diamagnetic shift of the lower energy photoluminecscence (PL) peak in the structure. Based on these results, we have concluded that the quantum dots are formed at the bottoms of TSRs, mainly because of the dependence of InAs composition on the local crystalline structure in this system. We also studied the lateral distribution and vertical alignment of TSR quantum dots by CL and PL measurements respectively. The advantages of TSR quantum dot technology can be summarized as follows: (i) better control in dot positioning in the lateral direction, (ii) realization of dot sizes exceeding limitations posed by lithography, (iii) high uniformity of dot size, and (iv) vertical alignment of quantum dots.

• 社団法人電子情報通信学会の論文
• 1996-11-25

著者

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• AWANO Yuji

  Fujitsu Ltd.

• SUGIYAMA Yoshihiro

  Fujitsu Limited

• Sugiyama Y

  Fujitsu Laboratories Ltd.

• SAKUMA Yoshiki

  Fujitsu limited

• SEKIGUCHI Takashi

  Institute for Materials Research, Tohoku University

• MUTO Shunichi

  the Faculty of Engineering, Hokkaido University

• Muto Shigeki

  Department Of Physics School Of Science Tokai University

• Awano Yuji

  Fujitsu Lab. Ltd. Kanagawa Jpn

• Awano Y

  Fujitsu Ltd. Atsugi Jpn

• Awano Yuji

  Fujitsu Laboratories Ltd.

• 武藤 真三

  山梨大学

• Muto S

  Kek Ibaraki

• Yokoyama Naoki

  Department of Pediatrics, Kobe University Graduate School of Medicine

• Sakuma Yoshiki

  Fujitsu Laboratories Ltd.

• Sekiguchi Takashi

  Department Of Physics Faculty Of Science Tohoku University:the Research Institute For Iron Steel And

• Segawa Yusaburo

  Photodynamics Research Center Riken (institute Of Physical And Chemical Research)

• Sugiyama Yoshinobu

  Fujitsu Laboratories Ltd.

• Yokoyama N

  Fujitsu Laboratories Ltd.

• Sekiguchi T

  Institute For Materials Research Tohoku Unviersity

• Sekiguchi Takashi

  Nanomaterials Laboratory National Institute For Materials Science (nims)

• Sekiguchi Takashi

  Department Of Chemistry And Materials Technology Kyoto Institute Of Technology

• Sekiguchi Takashi

  Nanomaterials Laboratory National Institute For Materials Science

• Sekiguchi Takashi

  Advanced Nano-characterization Center National Institute For Materials Science

• Sekiguchi Takashi

  Institute For Materials Research Tohoku University

• Yokoyama Naoki

  Institute For Nano Quantum Information Electronics The University Of Tokyo

• Sugiyama Yoshihiro

  Fujitsu Laboratories Ltd.

関連論文

• First Demonstration of Electrically Driven 1.55μm Single-Photon Generator
• Single-photon generator for telecom applications
• Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
• Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
• Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
• Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
• Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
• Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
• InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
• Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
• Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
• Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
• Interdiffusion between InAs Quantum Dots and GaAs Matrices
• Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
• New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
• Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
• Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
• Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
• InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
• Observation of Exciton Transition in 1.3-1.55μm Band from Single InAs/InP Quantum Dots in Mesa Structure
• Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
• Ultraviolet picosecond pulses from an all-solid-state Ce : LiSAF master oscillator and Ce : LiCAF power amplifier system
• Chemical Modification of Multi-walled Carbon Nanotubes (MWNTs) By Vacuum Ultraviolet (VUV) Irradiation Dry Process
• Carbon Nanotube Growth Technologies Using Tantalum Barrier Layer for Future ULSIs with Cu/Low-k Interconnect Processes
• Electrical Properties of Carbon Nanotube Bundles for Future Via Interconnects
• Influence of Growth Mode of Carbon Nanotubes on Physical Properties for Multiwalled Carbon Nanotube Films Grown by Catalystic Chemical Vapor Deposition
• Carbon nanotube technologies for future ULSI via interconnects
• Mechanical Polishing Technique for Carbon Nanotube Interconnects in ULSIs
• Simultaneous Formation of Multiwall Carbon Nanotubes and their End-Bonded Ohmic Contacts to Ti Electrodes for Future ULSI Interconnects
• A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
• A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
• A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
• Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
• Ureaplasma urealyticum and Mycoplasma hominis Presence in Umbilical Cord is Associated with Pathogenesis of Funisitis
• Quantification of lysophosphatidylcholines and phosphatidylcholines using liquid chromatography-tandem mass spectrometry in neonatal serum
• Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
• Precipitation of Cu and Fe in Dislocated Floating-Zone-Grown Silicon
• High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source
• Carbon-Doped-Base AlGaAs/GaAs HBTs Grown by Gas-Source Molecular Beam Epitaxy Using Only Gaseous Sources
• Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
• Selective Growth of GaAs by Pulsed-Jet Epitaxy (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
• Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
• Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
• Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
• Zinc-Blende-Type Cubic GaN Single Crystals Prepared in a Potassium Flux
• Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
• THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field
• Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
• Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
• Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
• Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
• Electrooptic Vector Sampling : Measurement of Vector Components of Electric Field by the Polarization Control of Probe Light
• Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
• Formation of Sb Nanocrystals in SiO_2 Film Using Ion Implantation Followed by Thermal Annealing
• High Speed Resistive Switching in Pt/TiO_2/TiN Resistor for Multiple-Valued Memory Device
• Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
• Self-Limited Growth in InP Epitaxy by Alternate Gas Supply : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
• Low-Power, High-Speed Integrated Logic with GaAs MOSFET : B-1: GaAs IC
• Evaluation of change of cerebral circulation by SpO_2 in preterm infants with apneic episodes using near infrared spectroscopy
• Gly71Arg mutation of the bilirubin UDP-glucuronosyltransferase 1A1 gene is associated with neonatal hyperbilirubinemia in the Japanese population
• Invited: GaAs X-Band Power FET : A-4: FIELD EFFECT TRANSISTORS (I)
• Two-Photon Control of Biexciton Population in Telecommunication-Band Quantum Dot
• Yellow Emission from Zinc Oxide giving an Electron Spin Resonance Signal at g=1.96
• Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
• Growth of Epitaxial CeO_2 Films on (1012) Sapphire by Halide Source Plasma Enhanced Chemical Vapor Deposition
• Ramp-edge Josephson Junction with Indium-Tin-Oxide Barrier
• 0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
• Open-Base Multi-Emitter HBTs with Increased Logic Functions
• Quasi-One-Dimensional Channel GaAs/AlGaAs Modulation Doped FET Using a Corrugated Gate Structure : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications
• First-Principles Study of Electronic Properties in Si Lattice Matched SiGeC Alloy with a Low C Concentration
• Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides
• Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
• Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
• Influences of Cu and Fe Impurities on Oxygen Precipitation in Czochralski-Grown Silicon
• Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel
• Effects of the Heating Rate in Alloying of An-Ge to n-Type GaAs on the Ohmic Properties
• A High-Speed Josephson Latching Driver for a Superconducting Single-Flux-Quantum System to Semiconductor System Interface
• Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector
• Additivity of the Quantized Conductance of Multiple Parallel Quantum Point Contacts
• Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands
• Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
• Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots

もっと見る 閉じる

スポンサーリンク