A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-02-20
著者
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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IMAMURA Kenichi
Fujitsu Laboratories Ltd.
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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Imamura K
Fujitsu Lab. Ltd. Kanagawa Jpn
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SHIBATOMI Akihiro
Fujitsu Limited
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YAMAGUCHI Yasuhiro
Fujitsu Laboratories Ltd.
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Muto S
Kek Ibaraki
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Imamura Kimitake
Faculty Of Engineering Yokohama National University
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Shibatomi Akihiro
Fujitsu Laboratories Limited
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Yokoyama N
Fujitsu Laboratories Ltd.
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Shibatomi A
Fujitsu Lab. Ltd. Atsugi Jpn
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Futatsugi T
Fujitsu Laboratories Ltd.
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Yamaguchi Yasuhiro
Fujitsu Laboratories Lid.
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