Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
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概要
- 論文の詳細を見る
We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electro-optic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the "state-lifetime", that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.
- 社団法人応用物理学会の論文
- 1989-05-20
著者
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TACKEUCHI Atsushi
Fujitsu Laboratories Ltd.
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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INATA Tsuguo
Fujitsu Laboratories Ltd.
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Ishikawa T
Riken Harima Institute
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Muto S
Kek Ibaraki
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Miyauchi Eizo
Fujitsu Laboratories Ltd.
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Tackeuchi A
Department Of Applied Physics Waseda University
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