Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-07-15

著者

• NAKATA Yoshiaki

  Fujitsu Laboratories Ltd.

• Wada Osamu

  Materials & Electronic Device Laboratory Mitsubishi Electric Corporation

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• TACKEUCHI Atsushi

  Fujitsu Laboratories Ltd.

• MUTO Shunichi

  Fujitsu Laboratories Ltd.

• NISHIKAWA Yuji

  Fujitsu Laboratories Ltd.

• WADA Osamu

  Fujitsu Laboratories Ltd.

• Wada Osamu

  FESTA Laboratories

• Muto Shigeki

  Department Of Physics School Of Science Tokai University

• Wada O

  The Department Of Electrical And Electronics Engineering Kobe University

• Wada Osamu

  Fujitsu Laboratories Limited

• Wada Osamu

  Fujitsu Laboratories

• Wada O

  The Femtosecond Technology Research Association:the Kobe University.

• 武藤 真三

  山梨大学

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Nishikawa Yukie

  Corporate Research & Development Center Toshiba Corporation

• Muto S

  Kek Ibaraki

• Wada Osamu

  The Femtosecond Technology Research Association:the Kobe University.

• Nakata Yoshiaki

  Fujitsu Laboratories Limited

• Tackeuchi A

  Department Of Applied Physics Waseda University

関連論文

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• Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
• Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
• A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
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• Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
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