Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-03-01

著者

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• HATAKOSHI Gen-ichi

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• SAITO Shinji

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• SAITO Shinji

  Materials and Devices Research Laboratories, Toshiba Corporation

• NISHIKAWA YUKIE

  Materials and Devices Research Laboratories, Toshiba Corporation

• ISHIKAWA Masayuki

  Materials and Devices Research Laboratories, Toshiba Corporation

• HATAKOSHI Gen-ichi

  Materials and Devices Research Laboratories, Toshiba Corporation

• Saito S

  Chiba Univ. Chiba Jpn

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Ishikawa M

  Institute For Solid State Physics The University Of Tokyo

• Saito S

  Kogakuin Univ. Tokyo Jpn

• Ishikawa Mitsuo

  Department Of Chemical Technology Kurashiki University Of Science And Arts

• Hatakoshi Gen-ichi

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Ishikawa Masayuki

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Saito Sakae

  Central Research Laboratory Hitachi Ltd.

• Ishikawa M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Saito Shinji

  Nhk Spring Co. Ltd.

• Ishikawa Masayuki

  Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation

関連論文

• Ferrielectricity in Chiral Smectic C_β of an Antiferroelectric Liquid Crystal
• Deflection of Light at the Boundaries between Ferroelectric and Antiferroelectric States in Chiral Smectic Liquid Crystals
• Optical Activity in Antiferroelectric Liquid Crystals
• Dielectric Relaxation Modes in the Phases of Antiferroelectric Liquid Crystals
• Phase Sequence in Smectic Liquid Crystals Having Fluorophenyl Group in the Core ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Direct Transfer of Plasmid DNA from Intact Yeast Spheroplasts into Plant Protoplasts : GENE STRUCTURE AND EXPRESSION
• Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
• Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
• Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
• Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
• Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
• A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
• InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
• Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
• Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
• Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
• Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
• Interdiffusion between InAs Quantum Dots and GaAs Matrices
• Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
• New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
• Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
• Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
• Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
• Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Thermal Analysis for GaN Laser Diodes
• Analysis of Device Characteristics for InGaN Semiconductor Lasers
• Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
• Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
• Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
• The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
• Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
• Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
• Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
• High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
• High-Power InGaAlP Laser Diodes for High-Density Optical Recording
• Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
• Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
• Effect of Lattice Mismatch on the Solidus Compositions of Ga_xIn_P Liquid Phase Epitaxial Crystals
• Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
• Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
• Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
• Thin Film Growth of YBa_2Cu_3O_ by ECR Oxygen Plasma Assisted Reactive Evaporation
• Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
• Rare-Earth(RE)-Barium Solubility Behaviour in Y(Ba_RE_x)Cu_3O_ and Sm(Ba_RE_x)Cu_3O_ : Electrical Properties of Condensed Matter
• Absence of Solid Solution of the Type, Y(Ba_RE_x)Cu_3O_ and Its Possible Implications : Electrical Properties of Condensed Matter
• Field-Induced Phase Transitions in Antiferroelectric Liquid Crystal
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• Field Induced Domains in Antiferroelectric Liquid Crystals
• The Effect of Microwave-Plasma on Decomposition and Oxidation of Ba(THD)_2
• Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
• Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
• Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
• Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• Carbon-Nanotube Tip for Highly-Reproducible Imaging of Deoxyribonucleic Acid Helical Turns by Noncontact Atomic Force Microscopy
• Structures of an Oxygen-Deficient TiO_2(110) Surface Studied by Noncontact Atomic Force Microscopy
• Characteristics of Mg-Doped GaN and AlGaN Grown by H_2-Ambient and N_2-Ambient Metalorganic Chemical Vapor Deposition
• Comparison of Device Performance in Two Thin-Film Electroluminescent Devices Made of Vacuum-Sublimed Dye Film and Spin-Coated Polymer Film
• Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
• Electroluminescent Behaviors in Multilayer Thin-Film Electroluminescent Devices Using 9, 10-Bisstyrylanthracene Derivatives
• Electronic and Geometric Structures of Fullerenes and Metallofullerenes
• Blue-Light-Emitting Organic Electroluminescent Devices with Oxadiazole Dimer Dyes as an Emitter
• Fermi Surfaces of Alkali-Metal-Doped C_ Solid
• Spectroscopic Study on Plasma-Enhanced Chemical Vapor Deposition of YBa_2Cu_3O_x Superconducting Thin Films
• Atomic Force Microscopy of Single-Walled Carbon Nanotubes Using Carbon Nanotube Tip
• Electrolytic Behavior of Iodo - and Chlorosilanes. The Formation of Si-Si and Si-sp-C Bonds^1
• Electrochemical Oxidation of Hydrosilanes. A Synthetic Approach to Halosilanes and Disilanes
• Effects of C_6O Doping on Electrical and Optical Properties of Poly[(disilanylene)oligophenylenes]
• Optical Properties and El Characteristics of Poly[(disilanylene)oligophenylenes]
• Preparation of (Pb, La)(Zr, Ti)O_3 Ferroelectric Films by RF Sputtering on Large Substrate
• A New Perpendicular Magnetic Film of Co-O by Evaporation
• High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
• High-Efficiency InGaAlP Visible Light-Emitting Diodes
• Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
• A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
• Effects of Frequency on the Crack-Healing Behavior of Si_3N_4/SiC Composite under Cyclic Stress(Macro-, Micro-, Meso-, and Nano-scopic Strength of Materials Relating to Microstructures)
• Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaP_xAs_ (x=0, 0.2, 0.4) Substrates
• Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
• Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
• Anomalous Diamagnetism of a Perovskite LaVO_3
• Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
• InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
• Improvement of Static Fatigue Strength of Silicon Nitride Composite Crack-Healed under Cyclic Stress(International Workshop on Smart Materials and Structural Systems, W03 Jointly organized by Material & Processing Division, Material & Mechanics Division,
• Analysis of Auger Recombination for Wurtzite InGaN
• Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

もっと見る 閉じる

スポンサーリンク