Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-05-15

著者

• HATAKOSHI Gen-ichi

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• ITAYA Kazuhiko

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• ISHIKAWA Masayuki

  Materials and Devices Research Laboratories, Toshiba Corporation

• HATAKOSHI Gen-ichi

  Materials and Devices Research Laboratories, Toshiba Corporation

• Itaya K

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Ishikawa M

  Institute For Solid State Physics The University Of Tokyo

• Ishikawa Mitsuo

  Department Of Chemical Technology Kurashiki University Of Science And Arts

• Itaya Kazuhiko

  Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation

• Hatakoshi Gen-ichi

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Ishikawa Masayuki

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Ishikawa M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Ishikawa Masayuki

  Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation

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