Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-10-15
著者
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HATAKOSHI Gen-ichi
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
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ITAYA Kazuhiko
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
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HATAKOSHI Gen-ichi
Materials and Devices Research Laboratories, Toshiba Corporation
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Itaya K
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Itaya Kazuhiko
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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SUGAWARA Hideto
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation
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Hatakoshi Gen-ichi
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Sugawara H
Toshiba Corp. Kawasaki Jpn
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Sugawara Hideto
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
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- Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
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- Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
- Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
- Characteristics of Mg-Doped GaN and AlGaN Grown by H_2-Ambient and N_2-Ambient Metalorganic Chemical Vapor Deposition
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- Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
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