Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Okajima M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• ONOMURA Masaaki

  Materials and Devices Research Laboratories, Toshiba Corporation

• SAITO Shinji

  Materials and Devices Research Laboratories, Toshiba Corporation

• RENNIE John

  Materials and Devices Research Laboratories, Toshiba Corporation

• NISHIKAWA YUKIE

  Materials and Devices Research Laboratories, Toshiba Corporation

• PARBROOK Peter

  Materials and Devices Research Laboratories, Toshiba Corporation

• ISHIKAWA Masayuki

  Materials and Devices Research Laboratories, Toshiba Corporation

• HATAKOSHI Gen-ichi

  Materials and Devices Research Laboratories, Toshiba Corporation

• Rennie John

  Materials And Devices Research Laboratories Toshiba Corporation

• Parbrook P

  Toshiba Corp. Kawasaki Jpn

• Saito S

  Kogakuin Univ. Tokyo Jpn

• Ishikawa M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

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• Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

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