Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-10-15

著者

• Okajima M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• HATAKOSHI Gen-ichi

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• ONOMURA Masaaki

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• YAMAMOTO Masahiro

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• NUNOUE Shin-ya

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• ITAYA Kazuhiko

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• ISHIKAWA Masayuki

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• SAITO Shinji

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• NISHIO Johji

  Toshiba Materials and Devices Laboratories

• SUGIURA Lisa

  Toshiba Materials and Devices Laboratories

• SUZUKI Mariko

  Toshiba Materials and Devices Laboratories

• RENNIE John

  Toshiba Materials and Devices Laboratories

• FUJIMOTO Hidetoshi

  Toshiba Materials and Devices Laboratories

• KOKUBUN Yoshihiro

  Toshiba Materials and Devices Laboratories

• OHBA Yasuo

  Toshiba Materials and Devices Laboratories

• Suzuki M

  Shizuoka Univ. Hamamatsu

• Okajima M

  Toshiba Corp. Kawasaki

• Rennie John

  Materials And Devices Research Laboratories Toshiba Corporation

• Nishio J

  Toshiba Corp. Kawasaki Jpn

• Saito Shinji

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Saito S

  Kogakuin Univ. Tokyo Jpn

• Itaya Kazuhiko

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Hatakoshi Gen-ichi

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Suzuki Mariko

  Advanced Semiconductor Devices Research Laboratories R&d Center Toshiba Corporation

• Suzuki M

  Research Center Sony Corporation

• Suzuki M

  Department Of Electronics Graduate School Of Engineering Tohoku University

• Ishikawa M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Rennie John

  Toshiba Corporation Materials And Devices Research Laboratories

• Ishikawa Masayuki

  Toshiba Corporation

• ITAYA Kazuhiko

  Toshiba Materials and Devices Laboratories

• ONOMURA Masaaki

  Toshiba Materials and Devices Laboratories

• NUNOUE Shin-ya

  Toshiba Materials and Devices Laboratories

• HATAKOSHI Gen-ichi

  Toshiba Materials and Devices Laboratories

• YAMAMOTO Masahiro

  Toshiba Materials and Devices Laboratories

関連論文

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• Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
• The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
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