High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-03-31

著者

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• Okajima M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• HATAKOSHI Gen-ichi

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• ITAYA Kazuhiko

  Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories

• HATAKOSHI Gen-ichi

  Research and Development Center, Toshiba Corporation

• NITTA Koichi

  Research and Development Center, Toshiba Corporation

• ITAYA Kazuhiko

  Research and Development Center, Toshiba Corporation

• NISHIKAWA Yukie

  Research and Development Center, Toshiba Corporation

• ISHIKAWA Masayuki

  Research and Development Center, Toshiba Corporation

• OKAJIMA Masaki

  Research and Development Center, Toshiba Corporation

• Onomura M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Okajima M

  Toshiba Corp. Kawasaki

• Okajima Masaki

  Research And Development Center Toshiba Corporation

• Itaya K

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Itaya Kazuhiko

  Research And Development Center Toshiba Corporation

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• Nishikawa Yukie

  Research & Development Center Toshiba Corporation

• Ishikawa M

  Institute For Solid State Physics The University Of Tokyo

• Ishikawa Mitsuo

  Department Of Chemical Technology Kurashiki University Of Science And Arts

• Itaya Kazuhiko

  Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation

• Hatakoshi Gen-ichi

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Ishikawa Masayuki

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Nitta K

  Kobe Univ. Kobe Jpn

• Ishikawa M

  Toshiba Corporation Advanced Semiconductor Devices Research Laboratories

• Hatakoshi Gen-ichi

  Research And Development Center Toshiba Corporation

• Ishikawa Masayuki

  Research & Development Center Toshiba Corporation

• Onomura M

  Univ. Tsukuba

関連論文

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• Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
• Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
• Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
• A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
• InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
• Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
• Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
• Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
• Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
• Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
• Interdiffusion between InAs Quantum Dots and GaAs Matrices
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• New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
• Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
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• InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
• Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
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• Thermal Analysis for GaN Laser Diodes
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• Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
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• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• Effects of Substrate Misorientation on Improvement of Electrical Properties in Zn-Doped InAlP Alloys
• Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
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• Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
• Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
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• Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
• Effects of Zn Electrical Activity on Band Gap Energy in Zn-Doped InGaAlP Grown by Metalorganic Chemical Vapor Deposition (SOLID STATE DEVICES AND MATERIALS 1)
• Anomalous Diamagnetism of a Perovskite LaVO_3
• Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
• InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
• Phase-Modulated Grating Lenses for Two-Dimensional Optical Branching
• Analysis of Auger Recombination for Wurtzite InGaN
• Analysis of Auger Recombination for Wurtzite InGaN
• Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
• Analysis of Auger Recombination in Wurtzite InGaN
• Long-Term Reliability Tests for InGaAlP Visible Laser Diodes

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