Analysis of Auger Recombination for Wurtzite InGaN
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概要
著者
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Hatakoshi Gen-ichi
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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NUNOUE Shinya
Toshiba R&D Center
関連論文
- Thermal Analysis for GaN Laser Diodes
- Analysis of Device Characteristics for InGaN Semiconductor Lasers
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
- Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
- High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
- High-Power InGaAlP Laser Diodes for High-Density Optical Recording
- Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
- Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
- Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
- Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
- Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
- Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
- High-Efficiency InGaAlP Visible Light-Emitting Diodes
- Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
- A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Analysis of Auger Recombination for Wurtzite InGaN
- Analysis of Auger Recombination for Wurtzite InGaN
- Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
- Analysis of Auger Recombination in Wurtzite InGaN