Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-04-01
著者
-
Okajima M
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
HATAKOSHI Gen-ichi
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
-
ITAYA Kazuhiko
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
-
ISHIKAWA Masayuki
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
-
OKAJIMA Masaki
Toshiba Research and Development Center
-
NITTA Koichi
Toshiba Research and Development Center
-
Onomura M
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
Okajima M
Toshiba Corp. Kawasaki
-
Okajima Masaki
Toshiba Research & Development Center
-
Itaya K
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
Ishikawa M
Institute For Solid State Physics The University Of Tokyo
-
Ishikawa Mitsuo
Department Of Chemical Technology Kurashiki University Of Science And Arts
-
Itaya Kazuhiko
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
-
Itaya Kazuhiko
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
Hatakoshi Gen-ichi
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
Ishikawa Masayuki
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
Nitta K
Kobe Univ. Kobe Jpn
-
Ishikawa M
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
-
Ishikawa Masayuki
Toshiba Corporation
-
Onomura M
Univ. Tsukuba
関連論文
- Direct Transfer of Plasmid DNA from Intact Yeast Spheroplasts into Plant Protoplasts : GENE STRUCTURE AND EXPRESSION
- Thermal Analysis for GaN Laser Diodes
- Analysis of Device Characteristics for InGaN Semiconductor Lasers
- Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes
- Reactive Ion Beam Etching and Overgrowth Process for Fabrication of InGaN Inner Stripe Laser Diodes
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
- Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
- High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
- High-Power InGaAlP Laser Diodes for High-Density Optical Recording
- Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
- Highly Reliable Transverse-Mode Stabilized InGaAlP Visible Light Laser Diodes at High-Power Operation
- Buried Facet BMH AlGaAs Laser : B-4: LD AND LED-2
- Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180℃ by Plasma Chemical Vapor Deposition
- Dependence of photodarkening on alloy composition of CdSxSe_<1-x> nanocrystals in glasses
- Laser-induced reversion of photodarkening in CdS-doped glass
- Effect of hydrogenation on photodarkening in CdS-doped glass
- Effect of Lattice Mismatch on the Solidus Compositions of Ga_xIn_P Liquid Phase Epitaxial Crystals
- Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
- Rare-Earth(RE)-Barium Solubility Behaviour in Y(Ba_RE_x)Cu_3O_ and Sm(Ba_RE_x)Cu_3O_ : Electrical Properties of Condensed Matter
- Absence of Solid Solution of the Type, Y(Ba_RE_x)Cu_3O_ and Its Possible Implications : Electrical Properties of Condensed Matter
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
- Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes
- Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
- Carbon-Nanotube Tip for Highly-Reproducible Imaging of Deoxyribonucleic Acid Helical Turns by Noncontact Atomic Force Microscopy
- Structures of an Oxygen-Deficient TiO_2(110) Surface Studied by Noncontact Atomic Force Microscopy
- Characteristics of Mg-Doped GaN and AlGaN Grown by H_2-Ambient and N_2-Ambient Metalorganic Chemical Vapor Deposition
- Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
- Atomic Force Microscopy of Single-Walled Carbon Nanotubes Using Carbon Nanotube Tip
- Electrolytic Behavior of Iodo - and Chlorosilanes. The Formation of Si-Si and Si-sp-C Bonds^1
- Electrochemical Oxidation of Hydrosilanes. A Synthetic Approach to Halosilanes and Disilanes
- Effects of C_6O Doping on Electrical and Optical Properties of Poly[(disilanylene)oligophenylenes]
- Optical Properties and El Characteristics of Poly[(disilanylene)oligophenylenes]
- Preparation of (Pb, La)(Zr, Ti)O_3 Ferroelectric Films by RF Sputtering on Large Substrate
- A New Perpendicular Magnetic Film of Co-O by Evaporation
- Current-Voltage Characteristics of p-p Isotype InGaAlP/GaAs Heterojunction with a Large Valence-Band Discontinuity
- High-Efficiency InGaAlP Visible Light-Emitting Diodes
- Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
- A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Low-Voltage Operated Piezoelectric Tunable Capacitor for Reconfigurable RF Systems
- High-Speed Dynamics in InP Based Multiple Quantum Well Lasers
- Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaP_xAs_ (x=0, 0.2, 0.4) Substrates
- Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
- Anomalous Diamagnetism of a Perovskite LaVO_3
- Gas Circuit Breaker Arc Modeling around Current Zero
- Analysis of Auger Recombination for Wurtzite InGaN
- Analysis of Auger Recombination for Wurtzite InGaN
- Terahertz Wave Enhanced Transmission through a Single Subwavelength Aperture with Periodic Surface Structures
- Analysis of Auger Recombination in Wurtzite InGaN