A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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渡部 行男
九大院理
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HATAKOSHI Gen-ichi
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
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ITAYA Kazuhiko
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
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ISHIKAWA Masayuki
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
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NITTA Koichi
Toshiba Research and Development Center
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WATANABE Yukio
Toshiba Research & Development Center
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Itaya K
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Ishikawa M
Institute For Solid State Physics The University Of Tokyo
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Ishikawa Mitsuo
Department Of Chemical Technology Kurashiki University Of Science And Arts
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Itaya Kazuhiko
Materials And Devices Research Laboratories Research And Development Center Toshiba Corporation
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Itaya Kazuhiko
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Hatakoshi Gen-ichi
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Ishikawa Masayuki
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Nitta K
Kobe Univ. Kobe Jpn
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UEMATSU Yutaka
Toshiba Research and Development Center
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Ishikawa M
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Uematsu Y
Research & Development Center Toshiba Corporation
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Watanabe Yukio
Toshiba Corporation
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Ishikawa Masayuki
Toshiba Corporation
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