Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
GaAs layers are epitaxially grown on Si substrates by metalorganic molecular beam epitaxy. The crystalline quality of GaAs-on-Si largely depends on the As_4 flux in addition to the growth temperature. Optimization of As_4 flux also improves the surface morphology of GaAs. These can be attributed to higher surface mobility of Ga-containing species under a low As-overpressure condition.
- 社団法人応用物理学会の論文
- 1990-04-20
著者
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渡部 行男
九大院理
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UETA Makoto
NTT Optoelectronics Laboratories
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OHMACHI Yoshiro
NTT Optoelectronics Laboratories
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Ohmachi Y
Ntt Optoelectronics Laboratories
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Ohmachi Yoshiro
Ntt Applied Electronics Laboratories
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WATANABE Yoshio
NTT Applied Electronics Laboratories
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UNETA Makoto
NTT Applied Electronics Laboratories
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Watanabe Yoshio
Ntt Advanced Technology Corporation
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