Watanabe Yoshio | Ntt Advanced Technology Corporation
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概要
関連著者
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Watanabe Yoshio
Ntt Advanced Technology Corporation
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WATANABE Yoshio
NTT Applied Electronics Laboratories
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Ohmachi Yoshiro
Ntt Applied Electronics Laboratories
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OHMACHI Yoshiro
NTT Optoelectronics Laboratories
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Ohmachi Y
Ntt Optoelectronics Laboratories
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渡部 行男
九大院理
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UETA Makoto
NTT Optoelectronics Laboratories
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UNETA Makoto
NTT Applied Electronics Laboratories
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Tateno Kouta
Ntt Basic Research Laboratories Ntt Corporation
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Gotoh Hideki
Ntt Basic Research Laboratories
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Gotoh Hideki
Ntt Basic Research Laboratories Ntt Corporation
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Fukuda Yukio
Ntt Applied Electronics Laboratories
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Kadota Yoshiaki
Ntt Applied Electronics Laboratories
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OKAMOTO Hiroshi
NTT Applied Electronics Laboratories
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Gotoh Hideki
Ntt Corp. Kanagawa Jpn
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KADOTA Yoshiaki
NTT Photonics Laboratories
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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KOHAMA Yoshitaka
NTT Applied Electronics Laboratories
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Kadota Y
Ricoh Co. Ltd. Yokohama Jpn
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Kadota Y
Ntt Photonics Lab. Atsugi‐shi Jpn
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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Watanabe Yoshio
NTT Applied Electronics Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180
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Ohmachi Yoshiro
NTT Applied Electronics Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180
著作論文
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
- Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy
- Domain Structures of As-Adsorbed Si(100) Surface and GaAs Overlayer
- Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic
- RHEED Intensity Observation during TEGa-As_4 Alternate Supply Growth of GaAs : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Multi-quantum structures of GaAs/AlGaAs Free-standing Nanowires
- Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates
- Electron-Beam-Induced Current Observation of Misfit Dislocations at Si_Ge_x/Si Interfaces
- Depth-Resolved Cathodoluminescence in GaAs Epilayers Grown on Si Substrates
- Multi-Quantum Structures of GaAs/AlGaAs Free-Standing Nanowires