Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices

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概要

• 論文の詳細を見る

• The etch-pit density of epitaxial GaAs layers grown on Si was significantly reduced by using the technique of growth interrupt and thermal cycles (in situ TC) followed by growth of In_<0.1>Ga_<0.9>As/GaAs strained-layer superlattices (SLS's). The etch-pit density of 1.4×10^6cm^<-2> (density of small pits by molten KOH etching) was achieved in 3.5 μm-thick GaAs epilayers. It was also found that the effect of SLS's on dislocation reduction was more enhanced by combining with the in situ TC process than the effect when SLS's were used by themselves.

• 社団法人応用物理学会の論文
• 1987-12-20

著者

• KADOTA Yoshiaki

  NTT Photonics Laboratories

• OHMACHI Yoshiro

  NTT Optoelectronics Laboratories

• Ohmachi Y

  Ntt Optoelectronics Laboratories

• Ohmachi Yoshiro

  Ntt Applied Electronics Laboratories

• Okamoto H

  Department Of Systems Innovation Graduate School Of Engineering Science Osaka University

• Kadota Y

  Ricoh Co. Ltd. Yokohama Jpn

• Kadota Y

  Ntt Photonics Lab. Atsugi‐shi Jpn

• Kadota Yoshiaki

  Ntt Applied Electronics Laboratories

• Okamaoto H

  Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive

• Okamoto H

  Department Of Systems And Control Engineering Anan National College Of Technology

• 岡本 宏巳

  Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University

• OKAMOTO Hiroshi

  NTT Applied Electronics Laboratories

• WATANABE Yoshio

  NTT Applied Electronics Laboratories

• Watanabe Yoshio

  Ntt Advanced Technology Corporation

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