Kadota Yoshiaki | Ntt Applied Electronics Laboratories
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概要
関連著者
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Ohmachi Yoshiro
Ntt Applied Electronics Laboratories
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Kadota Yoshiaki
Ntt Applied Electronics Laboratories
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OKAMOTO Hiroshi
NTT Applied Electronics Laboratories
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KADOTA Yoshiaki
NTT Photonics Laboratories
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OHMACHI Yoshiro
NTT Optoelectronics Laboratories
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Ohmachi Y
Ntt Optoelectronics Laboratories
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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KOHAMA Yoshitaka
NTT Applied Electronics Laboratories
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Kadota Y
Ricoh Co. Ltd. Yokohama Jpn
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Kadota Y
Ntt Photonics Lab. Atsugi‐shi Jpn
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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Watanabe Yoshio
Ntt Advanced Technology Corporation
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Fukuda Yukio
Ntt Applied Electronics Laboratories
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Oh'hara Takahiko
Ntt Applied Electronics Laboratories
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WATANABE Yoshio
NTT Applied Electronics Laboratories
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Watanabe Yoshio
NTT Applied Electronics Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180
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Kohama Yoshitaka
NTT Applied Electronics Laboratories, 3-9-11, Midori-cho, Musashino-shi, Tokyo 180
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Ohmachi Yoshiro
NTT Applied Electronics Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180
著作論文
- DLTS Measurement on Electron-Irradiated GaAs-on-Si
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
- Initial Stages of Epitaxial Growth of GaP on Si with AsH_3 Preflow
- Growth and Characterization of GaAs layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition : Condensed matter
- Depth-Resolved Cathodoluminescence in GaAs Epilayers Grown on Si Substrates
- InP Grown on Si Substrates with GaP Buffer Layers by Metalorganic Chemical Vapor Deposition