Growth and Characterization of GaAs layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition : Condensed matter
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概要
- 論文の詳細を見る
Epitaxial GaAs layers have been grown on (100) oriented Ge/Si substrates by metalorganic chemical vapor deposition. Double-crystal X-ray diffraction shows that the full width at half maximum of the (400) reflection obtained from 3μm-thick GaAs is as small as 114 arc seconds. The GaAs surface dislocation density estimated by a molten KOH study is 4.9×10^6 cm^<-2>. Photoluminescence measurements show that an excitonic transition at 1.4852 eV dominates at 4.2K. These results suggest that Ge/Si substrates are suitable for growing sufficiently high quality GaAs layers.
- 社団法人応用物理学会の論文
- 1988-04-20
著者
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Fukuda Yukio
Ntt Applied Electronics Laboratories
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Ohmachi Yoshiro
Ntt Applied Electronics Laboratories
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Kadota Yoshiaki
Ntt Applied Electronics Laboratories
関連論文
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- Growth and Characterization of GaAs layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition : Condensed matter
- Critical Thickness for the Si_Ge_x/Si Heterostructure
- Electron-Beam-Induced Current Observation of Misfit Dislocations at Si_Ge_x/Si Interfaces
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